INVESTOR RELATIONS

News

"We always keep you well informed with our latest financial news."
 

All press releases
Period
19. April 2012 | Press Releases

MicroLink Orders Further AIX 2800G4 Reactor from AIXTRON

AIXTRON SE today announced that MicroLink Devices, located in Niles, IL, USA, has further increased its capacity for manufacturing HBT and solar cell epitaxial structures by ordering a second AIXTRON 2800G4 MOCVD reactor with automated wafer loading. The order was received in the third quarter of 2011 and will be delivered within the second quarter of 2012.

read article
11. April 2012 | Press Releases

Japan’s AIST Achieves Graphene Production on 300mm Wafers using AIXTRON System

AIXTRON SE today announced that its BM 300 system has been successfully started up at the National Institute of Advanced Industrial Science and Technology (AIST) in Japan. The system was installed in 2011 in AIST’s super cleanroom facility in Tsukuba and was commissioned by the local AIXTRON support team. Dr. Shintaro Sato, group leader at AIST, presented the growth results on April 10 at the 2012 MRS Spring Meeting.

read article
05. April 2012 | Press Releases

China’s Fujian Institute of Research to Investigate Telecom Lasers with AIXTRON CCS MOCVD Reactor

AIXTRON SE today announced that new customer FJIRSM – the Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, has placed an order for one MOCVD system. The CCS R&D reactor in a 6x2-inch wafer configuration is intended for telecommunications diode laser research.

read article
03. April 2012 | Press Releases

TU Ilmenau to Develop III-V Solar Cells with AIXTRON R&D MOCVD

AIXTRON SE today announced that existing customer Ilmenau University of Technology, one of the leading research institutes in Germany, has placed an order for one AIXTRON MOCVD system in a double 1x2-inch wafer configuration. The system will be used to develop new materials and structures for III-V-based opto-electronics, high-efficiency concentrator photovoltaics and III-V-integration on silicon and germanium.

read article
27. March 2012 | Press Releases

NTT Photonics Selects AIXTRON MOCVD for Laser Research

AIXTRON SE today announced that existing customer NTT Photonics of Japan has placed an order for one CCS reactor MOCVD system for InGaAsP quaternary diode laser research.

read article
19. March 2012 | Press Releases

University of Texas at Austin Demonstrates High Quality Wafer-scale Graphene Using AIXTRON System

Researchers at the University of Texas at Austin, USA, have demonstrated high quality wafer-scale deposition of graphene on evaporated copper films for the first time, using their recently acquired cold-wall vertical BM (Black Magic) Pro reactor from AIXTRON. The findings have been reported in a publication on the American Chemical Society's Nano website*.

read article

Your contact person

Investor Relations

Christian Ludwig

Vice President

Your contact person

Investor Relations

Ralf Penner

Senior IR Manager

Service

AIXTRON SE (Headquarters)

AIXTRON 24/7 Technical Support Line

AIXTRON Europe

AIXTRON Ltd (UK)

AIXTRON K.K. (Japan)

AIXTRON Korea Co., Ltd.

AIXTRON Taiwan Co., Ltd. (Main Office)

AIXTRON Inc. (USA)

Products

Vincent Meric
Vice President Marketing

Career

Laura Preinich
Recruiter

Tom Lankes
Talent Acquisition Expert- Ausbildungsleitung

Sustainability

Christoph Pütz
Senior Manager ESG & Sustainability

Company & Investor Relations

Christian Ludwig
Vice President

Ralf Penner
Senior IR Manager

Press & Public Relation

Ragah Dorenkamp
Director Corporate Communications

Research & Development

Prof. Dr. Michael Heuken
Vice President Advanced Technologies