DEPOSITION SYSTEM FOR COMPOUND SEMICONDUCTORS

AIX G5 WW C

 “Best performance for Next Generation SiC Power Electronics to address Global Mega Trends”

 

High throughput batch epitaxy with single wafer control - combining best of both worlds.

Key Benefits

  • Best in class throughput and lowest cost of ownership per wafer
  • Single wafer performance in batch configuration for excellent epitaxial layer quality
  • Si fab compatible automation supports SiC power market ramp-up

Product Features

  • Planetary reactor with hot wafer transfer
  • Efficient gas utilization in growth chamber
  • Wafer level temperature control
  • Cassette-to-cassette wafer handling

     
  • Fast epitaxial processing 
  • 8x150 mm configuration with single wafer rotation
  • AutoSat feature for within batch uniformity
  • SECS-GEM factory interface

AIX G5 WW tool with wafer wafer transfer module

Your contact person

Product Management

Dr. Jens Voigt

Director Product Management