DEPOSITION SYSTEM FOR COMPOUND SEMICONDUCTORS

AIX G5 WW C

 “Best performance for Next Generation SiC Power Electronics to address Global Mega Trends”

 

High throughput batch epitaxy with single wafer control - combining best of both worlds.

Key Benefits

  • Best in class throughput and lowest cost of ownership per wafer
  • Single wafer performance in batch configuration for excellent epitaxial layer quality
  • Si fab compatible automation supports SiC power market ramp-up

Product Features

  • Planetary reactor with hot wafer transfer
  • Efficient gas utilization in growth chamber
  • Wafer level temperature control
  • Cassette-to-cassette wafer handling

     
  • Fast epitaxial processing 
  • 8x150 mm configuration with single wafer rotation
  • AutoSat feature for within batch uniformity
  • SECS-GEM factory interface

AIX G5 WW C - Tool with automated wafer transfer module

Your contact person

Marketing

Vincent Meric

Vice President Marketing

Service

AIXTRON SE (Headquarters)

AIXTRON 24/7 Technical Support Line

AIXTRON Europe

AIXTRON Ltd (UK)

AIXTRON K.K. (Japan)

AIXTRON Korea Co., Ltd.

AIXTRON Taiwan Co., Ltd. (Main Office)

AIXTRON Inc. (USA)

Products

Vincent Meric
Vice President Marketing

Career

Laura Preinich
Recruiter

Tom Lankes
Talent Acquisition Expert- Ausbildungsleitung

Sustainability

Christoph Pütz
Senior Manager ESG & Sustainability

Investor Relations

Christian Ludwig
Vice President Investor Relations & Corporate Communications

Ralf Penner
Senior IR Manager

Press & Public Relations

Christian Ludwig
Vice President Investor Relations & Corporate Communications

Research & Development

Prof. Dr. Michael Heuken
Vice President Advanced Technologies