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29. February 2012 | Press Releases

Epistar Receives its First AIXTRON CRIUS II-XL MOCVD System

AIXTRON SE today announced that its existing customer Epistar, a leading manufacturer of optoelectronic materials and devices in Taiwan, has received its first CRIUS II-XL system in a 19x4-inch wafer configuration. It will use the system to mass produce ultra-high brightness (UHB) blue and white LEDs.

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23. February 2012 | Press Releases

IIT Pisa Pushes Graphene for Nanoelectronics and Energy with AIXTRON Systems

AIXTRON SE today announced that the Italian Institute of Technology (IIT) in Pisa, Italy, has ordered two AIXTRON BM Pro systems in a 4-inch wafer configuration. IIT Pisa researchers will use these systems for the development and production of graphene for the implementation of novel hydrogen storage systems.

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31. January 2012 | Press Releases

NTU Singapore Orders AIXTRON Black Magic System for High Frequency Electronics CNT Project

AIXTRON SE today announced that Nanyang Technological University, Singapore, has procured an AIXTRON 2-inch Black Magic PECVD system. NTU researchers will be using the system for the preparation of carbon nanotubes (CNT) and graphene for high frequency electronic devices. The turnkey system was installed and commissioned by the local AIXTRON service and support team in the Nanoelectronics Laboratory, School of Electrical and Electronic Engineering, NTU.

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17. January 2012 | Press Releases

United Silicon Carbide to Develop Next Generation SiC Devices with AIXTRON SiC Planetary Reactor Technology

AIXTRON SE today announced that United Silicon Carbide, Inc. (USCi), based in Princeton, NJ, USA, is developing the next generation of SiC devices utilizing the AIXTRON VP2400 Hot-Wall CVD tool. The order was received in the fourth quarter of 2011 and is planned to be delivered in the third quarter of 2012.

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