News

Plessey Orders AIXTRON CRIUS II-XL Reactor for GaN-on-Si LED Production

AIXTRON SE today announced a new MOCVD system order from Plessey Semiconductors Ltd., UK. The contract is for the first of a set of production ready CRIUS II-XL reactors in a 7x6-inch wafer configuration. The reactors are dedicated to the growth of high brightness LED wafers based on gallium nitride on silicon (GaN-on-Si) materials.

China’s Sinoepi to Produce Nitride LED Wafers with a AIXTRON CRIUS II-L System

AIXTRON SE today announced that a new customer, Sinoepi, a leading manufacturer of wafer materials in China, has placed an order for one MOCVD system, a CRIUS II-L reactor in a 69x2-inch wafer configuration. The system will be used for the production of epitaxial wafers for ultra-high brightness (UHB) gallium nitride (GaN) based LEDs.

JENOPTIK expands high power laser production with new AIXTRON system

AIXTRON SE today announced a new MOCVD systems order from existing customer JENOPTIK Diode Lab GmbH in Germany. The contract is for one AIX 2600G3 IC MOCVD reactor in a 12x4-inch wafer configuration to form the basis of a new capacity expansion for high power semiconductor laser diode epitaxial materials at JENOPTIK’s Lasers & Material Processing Division.

AIXTRON SE General Meeting 2012 - Shareholders Approve All Resolutions

Dow Corning orders additional AIXTRON SiC Planetary Reactor systems

Further expansion due to growing SiC demand

University of Warsaw Adds AIXTRON CCS Reactor for Gallium Nitride Research

AIXTRON SE today announced a new MOCVD system order from the University of Warsaw, Poland. The contract is for one Close Coupled Showerhead (CCS) reactor in a 3x2-inch wafer configuration, to be used for the growth of gallium nitride (GaN) materials.