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24. April 2012 | Press Releases

Changchun University of Science and Technology Orders New AIXTRON Reactor for Laser Development

AIXTRON SE today announced a new MOCVD system order from Changchun University of Science and Technology (CUST) in China. CUST is a new customer, and has placed a contract for one AIXTRON multi-wafer MOCVD system which will be dedicated to the growth of quaternary materials for laser diodes.

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19. April 2012 | Press Releases

MicroLink Orders Further AIX 2800G4 Reactor from AIXTRON

AIXTRON SE today announced that MicroLink Devices, located in Niles, IL, USA, has further increased its capacity for manufacturing HBT and solar cell epitaxial structures by ordering a second AIXTRON 2800G4 MOCVD reactor with automated wafer loading. The order was received in the third quarter of 2011 and will be delivered within the second quarter of 2012.

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11. April 2012 | Press Releases

Japan’s AIST Achieves Graphene Production on 300mm Wafers using AIXTRON System

AIXTRON SE today announced that its BM 300 system has been successfully started up at the National Institute of Advanced Industrial Science and Technology (AIST) in Japan. The system was installed in 2011 in AIST’s super cleanroom facility in Tsukuba and was commissioned by the local AIXTRON support team. Dr. Shintaro Sato, group leader at AIST, presented the growth results on April 10 at the 2012 MRS Spring Meeting.

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05. April 2012 | Press Releases

China’s Fujian Institute of Research to Investigate Telecom Lasers with AIXTRON CCS MOCVD Reactor

AIXTRON SE today announced that new customer FJIRSM – the Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, has placed an order for one MOCVD system. The CCS R&D reactor in a 6x2-inch wafer configuration is intended for telecommunications diode laser research.

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03. April 2012 | Press Releases

TU Ilmenau to Develop III-V Solar Cells with AIXTRON R&D MOCVD

AIXTRON SE today announced that existing customer Ilmenau University of Technology, one of the leading research institutes in Germany, has placed an order for one AIXTRON MOCVD system in a double 1x2-inch wafer configuration. The system will be used to develop new materials and structures for III-V-based opto-electronics, high-efficiency concentrator photovoltaics and III-V-integration on silicon and germanium.

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27. March 2012 | Press Releases

NTT Photonics Selects AIXTRON MOCVD for Laser Research

AIXTRON SE today announced that existing customer NTT Photonics of Japan has placed an order for one CCS reactor MOCVD system for InGaAsP quaternary diode laser research.

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