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03. July 2012 | Press Releases

AIXTRON Ships Next Generation QXP-8300 Atomic Layer Deposition Systems to Major Korean Customer

AIXTRON SE, a major supplier of semiconductor deposition equipment and services, announced that it has received a multi-tool order for its next generation QXP-8300 ALD system from a leading Korean DRAM manufacturer. The QXP-8300 production system for sub-30 nm DRAM technology nodes will help accelerate high-volume manufacturing of the most advanced DRAM technology node available.

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26. June 2012 | Press Releases

Taiwan’s National Chung Hsing University to Use AIXTRON CCS MOCVD System for GaN-on-Silicon Research

AIXTRON SE today announced that National Chung Hsing University (NCHU), a new customer and a leading technical university in Taiwan, has placed an order for one Close Coupled Showerhead (CCS) MOCVD system in a 3x2-inch wafer configuration.

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20. June 2012 | Press Releases

Tim Wang appointed General Manager of AIXTRON China Ltd.

AIXTRON SE today announced that Mr. Tim Wang (汪挺), has been appointed General Manager of its subsidiary AIXTRON China Ltd.

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14. June 2012 | Press Releases

AIXTRON wins LEDinside Aurora Award 2012

Best MOCVD Equipment Award 2012 for latest CRIUS II-XL Technology At the LEDforum 2012 in Guangzhou, China, AIXTRON SE has been awarded the 2012 LEDinside Aurora Award in the “Best MOCVD Equipment” category. With this award, the jury has honored and recognized outstanding products and performance in the LED industry. AIXTRON received its award for its latest CRIUS II-XL technology.

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12. June 2012 | Press Releases

Plessey Orders AIXTRON CRIUS II-XL Reactor for GaN-on-Si LED Production

AIXTRON SE today announced a new MOCVD system order from Plessey Semiconductors Ltd., UK. The contract is for the first of a set of production ready CRIUS II-XL reactors in a 7x6-inch wafer configuration. The reactors are dedicated to the growth of high brightness LED wafers based on gallium nitride on silicon (GaN-on-Si) materials.

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05. June 2012 | Press Releases

China’s Sinoepi to Produce Nitride LED Wafers with a AIXTRON CRIUS II-L System

AIXTRON SE today announced that a new customer, Sinoepi, a leading manufacturer of wafer materials in China, has placed an order for one MOCVD system, a CRIUS II-L reactor in a 69x2-inch wafer configuration. The system will be used for the production of epitaxial wafers for ultra-high brightness (UHB) gallium nitride (GaN) based LEDs.

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