AIXTRON orders & revenues stabilize / Increased Order Intake and EBIT profitability expected to return within H2/2012 / 2013 expected to be a growth year / AIXTRON's non-LED activities gaini

AIXTRON Introduces AIX G5+

5x200 mm GaN-on-Si Technology for the AIX G5 Reactor Platform

EpiGaN Successfully Starts 8-inch GaN-on-Si Development on AIXTRON Reactors

AIXTRON SE today announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration.

TRUMPF Photonics Selects AIXTRON AIX 2800G4-TM System

AIXTRON SE today announced that TRUMPF Photonics, located in Princeton, NJ, USA has taken delivery of an AIXTRON AIX 2800G4-TM MOCVD reactor for high power laser applications.

TECHNOTUBES Project – AIXTRON Launches New BM 300T Carbon Nanotubes System

AIXTRON SE today announced the successful conclusion of the European Commission-funded “TECHNOTUBES” (Technology for Wafer-Scale Carbon Nanotubes) project, with a demonstration of its new automated growth equipment, BM 300T. The aim of the 3-year project was to develop growth processes, automated equipment, quality control/monitoring and a variety of end-applications based on carbon nanotubes. The members of the project consortium were the University of Cambridge (coordinator), ETH Zurich, TU Denmark, TU Berlin, Fritz Haber Institute, CNR-Italy, Philips, THALES, Cambridge CMOS Sensors, IMEC, and AIXTRON.

AIXTRON Ships Next Generation QXP-8300 Atomic Layer Deposition Systems to Major Korean Customer

AIXTRON SE, a major supplier of semiconductor deposition equipment and services, announced that it has received a multi-tool order for its next generation QXP-8300 ALD system from a leading Korean DRAM manufacturer. The QXP-8300 production system for sub-30 nm DRAM technology nodes will help accelerate high-volume manufacturing of the most advanced DRAM technology node available.