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18. October 2022 | Press Releases

Furukawa in Japan selects AIXTRONs MOCVD technology for the production of optoelectronic devices / AIXTRON to support development of GaAs and InP based optoelectronics in Japan

EQS-Media / 18.10.2022 / 07:30 CET/CEST Furukawa in Japan selects AIXTRONs MOCVD technology for the production of optoelectronic devicesAIXTRON to support development of GaAs and InP based optoelectronics in JapanHerzogenrath, October 18, 2022 – AIXTRON SE (FSE: AIXA), a worldwide leading provider of

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13. September 2022 | Press Releases

AIXTRON launches next Generation G10-SiC 200 mm product solution for Silicon Carbide Epitaxy

DGAP-Media / 13.09.2022 / 07:30 CET/CEST AIXTRON launches next Generation G10‑SiC 200 mm product solution for Silicon Carbide EpitaxyHerzogenrath, September 13, 2022 – AIXTRON SE launched its new G10-SiC 200 mm system for high volume manufacturing of latest generation Silicon Carbide (“SiC”) power devices

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21. July 2022 | Press Releases

AIXTRON CCS MOCVD system to be delivered to The University of Texas at Austin for Gallium Oxide Power devices / AIXTRON supports Top-US-University with advanced MOCVD System for R&D

DGAP-Media / 21.07.2022 / 07:32 AIXTRON CCS MOCVD system to be delivered to The University of Texas at Austin for Gallium Oxide Power devices AIXTRON supports Top-US-University with advanced MOCVD System for Research and DevelopmentHerzogenrath, July 21, 2022 – AIXTRON SE announced today, that it will

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