Vishay selects AIXTRON SiC multiwafer batch technology

Vishay selects AIXTRON SiC multiwafer batch technology

Herzogenrath, April 23, 2024 – AIXTRON’s G10-SiC epitaxy production platform (FSE: AIXA) has been chosen by Vishay Intertechnology, Inc. (NYSE: VSH) to empower the company’s in-house SiC epitaxy needs for power device manufacturing. The system will be delivered to Vishay’s automotive-certified Newport fab in South Wales. With its flexible dual wafer size configuration of 9x150 mm and 6x200 mm, the G10-SiC supports the transition between the wafer diameters.

Vishay is one of the world's largest manufacturers of discrete semiconductors and passive electronic components. These components are used in all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, aerospace, power supplies, and medical markets.

“The new G10-SiC epi production tool delivers a leading cost structure for 200 mm epitaxy, which meets Vishay’s productivity goals. This, in combination with an excellent uniformity performance on 200mm wafers, has made us choose AIXTRON technology. The AIXTRON team has developed a unique solution for the tightest control of doping levels and uniformity on 200 mm SiC wafers. This performance is maintained across the entire 6x200 mm wafer batch with an impressive run-to-run stability”, said Danilo Crippa, Senior Director R&D for SiC development, Vishay Intertechnology, Inc.

“We are very grateful for the opportunity to partner with Vishay and deliver our state-of-the-art epi production system with flexible 150 & 200 mm SiC wafer configuration for Vishay’s automotive-certified Newport fab in South Wales. Our strong customer service team in the South Wales Compound Semiconductor Cluster is dedicated to fully support the production ramp of Vishay’s SiC inhouse epitaxy to the highest productivity within a short period of time.”, said Dr. Frank Wischmeyer, Vice President SiC, AIXTRON SE.

First introduced in September 2022, AIXTRON’s G10-SiC has quickly become the tool of record for both 150 mm and 200 mm SiC epitaxy. The latest technology advances allow the system to deliver best-in-class uniformities combined with the highest wafer throughput per m² cleanroom space on the market, enabling the production of SiC power device epi at the lowest total cost of ownership. Uniformity performance and productivity are drivers for production yield and cost and are therefore drivers for electrification of the automotive and other industrial markets.

Contact

Media:
Ragah Dorenkamp
Director Corporate Communications
fon +49 (2407) 9030-1830
e-mail r.dorenkamp@aixtron.com

Investors:
Carsten Werle
Director Investor Relations (interim)
fon +49 (2407) 9030-8815
e-mail c.werle.sc@aixtron.com

About AIXTRON

AIXTRON SE is a leading provider of deposition equipment to the semiconductor industry. The Company was founded in 1983 and is headquartered in Herzogenrath (near Aachen), Germany, with subsidiaries and sales offices in Asia, United States, and in Europe. AIXTRON´s technology solutions are used by a diverse range of customers worldwide to build advanced components for electronic and optoelectronic applications based on compound or organic semiconductor materials. Such components are used in a broad range of innovative applications, technologies and industries. These include Laser and LED applications, display technologies, data transmission, SiC and GaN power management and conversion, communication, signaling and lighting as well as a range of other leading-edge applications.

Our registered trademarks: AIXACT®, AIXTRON®, Atomic Level SolutionS®, Close Coupled Showerhead®, CRIUS®, Gas Foil Rotation®, OVPD®, Planetary Reactor®, PVPD®, TriJet®

For further information on AIXTRON (FSE: AIXA, ISIN DE000A0WMPJ6) please visit our website at: www.aixtron.com

Forward-Looking Statements

This document may contain forward-looking statements regarding the business, results of operations, financial condition and earnings outlook of AIXTRON. These statements may be identified by words such as “may”, “will”, “expect”, “anticipate”, “contemplate”, “intend”, “plan”, “believe”, “continue” and “estimate” and variations of such words or similar expressions. These forward-looking statements are based on our current assessments, expectations and assumptions, of which many are beyond control of AIXTRON, and are subject to risks and uncertainties. You should not place undue reliance on these forward-looking statements. Should these risks or uncertainties materialize or should underlying expectations not occur or assumptions prove incorrect, actual results, performance or achievements of AIXTRON may materially vary from those described explicitly or implicitly in the relevant forward-looking statement. This could result from a variety of factors, such as actual customer orders received by AIXTRON, the level of demand for deposition technology in the market, the timing of final acceptance of products by customers, the condition of financial markets and access to financing for AIXTRON, general conditions in the market for deposition plants and macroeconomic conditions, cancellations, rescheduling or delays in product shipments, production capacity constraints, extended sales and qualification cycles, difficulties in the production process, the general development in the semi-conductor industry, increased competition, fluctuations in exchange rates, availability of public funding, fluctuations and/or changes in interest rates, delays in developing and marketing new products, a deterioration of the general economic situation and any other factors discussed in any reports or other announcements , in particular in the chapter Risks in the Annual Report, filed by AIXTRON. Any forward-looking statements contained in this document are based on current expectations and projections of the executive board based on information available the date hereof. AIXTRON undertakes no obligation to revise or update any forward-looking statements as a result of new information, future events or otherwise, unless expressly required to do so by law. 

This document is also available in a German language translation version. In case of discrepancies, the English language document shall prevail and shall be the valid version.