Sumitomo to Expand GaN-on-SiC Device Production with AIXTRON System

Herzogenrath, June 03, 2014 – Sumitomo Electric Device Innovations, Inc. (SEDI), Japan, has ordered an AIXTRON CRIUS MOCVD system to be delivered with 4-inch wafer configuration in order to boost production of gallium nitride on silicon carbide devices for RF data transfer applications. The purchase was made in the first quarter of 2014 for delivery at SEDI’s Electron Devices Division in Yokohama in the third quarter.

SEDI is preparing for a ramp-up in demand expected to begin in 2015 and chose the AIXTRON system due to its unmatched reputation for 4-inch wafer uniformity and precise process control, which is especially important for device production on cost-intensive silicon carbide wafers. The new reactor will be equipped with optional features such as dynamic gap adjustment, ARGUS in-situ temperature control, and EpiCurve TT metrology system. The ARGUS monitoring device provides full wafer mapping in real time for optimum control of the growth process. Extended flexibility is enabled by allowing the adjustment of the process gap between the showerhead and the substrate.

Sumitomo Electric Device Innovations, Inc. has an established industry reputation for providing some of the best RF components available. The company already has a range of GaN HEMT (High Electron Mobility Transistor) devices on offer for radar, mobile phone base-stations, and general applications. These GaN-on-SiC HEMT devices enable high power amplification at operating frequencies of up to 14 GHz RF.

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