NTT Photonics Selects AIXTRON MOCVD for Laser Research

Ordered in the second quarter of 2011, the reactor will be delivered in the first quarter of 2012. A local AIXTRON service support team will install the reactor at the NTT Photonics Device Laboratory in Atsugi, Kanagawa Prefecture, Japan.

The CCS MOCVD reactor represents state-of-the-art technology that has set new standards in laboratories and companies worldwide. The new reactor for NTT Photonics will come with several special features including an EpiCurveTT, ARGUS, Gap Adjustment and the Epison 4 in-line gas concentration monitor.

For the NTT Photonics application, another important selection criterion was the excellent Group V efficiency of the CCS reactor which directly translates into significantly lower operating costs.

Able to deliver even the most challenging MOCVD applications, the AIXTRON CCS reactor has very good process flexibility thanks to the Showerhead concept and uniform flow distribution. Combined with gap adjustment and ARGUS in-situ monitoring for temperature mapping of the entire susceptor, it is the perfect tool for research and development of high-end devices such as InGaAsP quaternary diode lasers.

NTT Photonics Laboratories has a long history of world-class competence in the field of research and development of photonic device technology to support next generation innovation in telecommunications. This involves photonics devices, electronic components, modules and materials with the goal of further contributing to the progress of the telecommunications business in developing new technologies such as diode lasers, and implementing the commercialization of that technology.

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