07. November 2019 | Press Releases

EpiWorld accelerates Commercialization of SiC Devices with new AIXTRON Tool

AIX G5 WW C offers best-in-class production quality at lowest cost

Herzogenrath/Germany, 07 November, 2019 – AIXTRON SE (FSE: AIXA), a worldwide leading provider of deposition equipment to the semiconductor industry, today announced that it has provided an AIX G5 WW C system to EpiWorld International Co., Ltd for the further development of next generation silicon carbide (SiC) epitaxial wafers mainly used for the manufacturing of power devices for automotive applications. The shipment and installation of AIXTRON’s high-volume manufacturing system to EpiWorld’s cleanroom facilities in Xiamen, China, has been conducted in Q3/2019.

The AIX G5 WW C MOCVD tool is based on AIXTRON’s production-proven, fully-automated Planetary Reactor® platform disposing the largest batch capacity and highest throughput in the industry. The system offers flexible 6-inch or 4-inch configurations with the design aiming at squeezing production costs to a minimum, while maintaining excellent production quality.

EpiWorld seeks to further expand its production capacity to meet the increasing demand by customers. A leading China-based producer, the company has already completed production lines for 4- and 6-inch SiC epitaxial wafers for making 600V, 1,200V and 1,700V power devices.

“In recent years, we have been qualified as a leading supplier of SiC epitaxy wafers by device manufacturers in the automotive and various other sectors. Therefore, we have a strong footprint in one of the most challenging industries. We had so far served over 100 customers around the world. With this new addition, our annual capacity will be increased to 60,000 wafers in 2019. Our recently completed phase I expansion of an 18,000 square meters new facility is designed to provide manufacturing space for an annual capacity of up to 400,000 wafers. As we and our customers have high quality standards, we rely on industry leaders such as AIXTRON and their proven system technology to meet these requirements appropriately. We are looking forward to launch the high-volume production of our SiC epitaxial wafers with the AIX G5 WW C”, says Dr. Gan Feng, General Manager of EpiWorld.

Dr. Felix Grawert, President of AIXTRON SE, comments: “We are delighted to cooperate with one of the leading epitaxy foundries to accelerate the further commercialization of silicon carbide. Silicon carbide will support the development of numerous high-end power electronics applications, meaning that we are paving the way for megatrends such as e-mobility or renewable energy.”
 

Download press release

Our registered trademarks: AIXACT®, AIXTRON®, Atomic Level Solutions®, Close Coupled Showerhead®, CRIUS®, EXP®, EPISON®, Gas Foil Rotation®, Optacap™, OVPD®, Planetary Reactor®, PVPD®, STExS®, Trijet®

Your contact person

Christian Ludwig

Vice President Investor Relations & Corporate Communications

Phone: +49 (2407) 9030-444

Send e-mail
Xing
LinkedIn

Service

AIXTRON SE (Headquarters)

AIXTRON 24/7 Technical Support Line

AIXTRON Europe

AIXTRON Ltd (UK)

AIXTRON K.K. (Japan)

AIXTRON Korea Co., Ltd.

AIXTRON Taiwan Co., Ltd. (Main Office)

AIXTRON Inc. (USA)

Products

Vincent Meric
Vice President Marketing

Career

Laura Preinich
Recruiter

Tom Lankes
Talent Acquisition Expert- Ausbildungsleitung

Sustainability

Christoph Pütz
Senior Manager ESG & Sustainability

Investor Relations

Christian Ludwig
Vice President Investor Relations & Corporate Communications

Ralf Penner
Senior IR Manager

Press & Public Relations

Christian Ludwig
Vice President Investor Relations & Corporate Communications

Research & Development

Prof. Dr. Michael Heuken
Vice President Advanced Technologies