AIXTRON Receives CS Manufacturing Award 2013 for its AIX G5+ GaN-on-Si Technology

Editor Richard Stevenson from Compound Semiconductor (CS) magazine presented the award yesterday, March 4, 2013 to AIXTRON’s Vice President Europe Dr. Frank Schulte. "GaN-on-silicon technology promises to revolutionize power electronics and slash the cost of LEDs, spurring a lighting revolution,” he commented at the award ceremony in conjunction with the CS Europe exhibition in Frankfurt, Germany. “One manufacturing tool that I am tipping to play a major role in driving both these changes is the AIXTRON AIX G5+, a reactor that combines high throughput with impressive levels of uniformity."

Andreas Toennis, Chief Technology Officer at AIXTRON SE, comments: “Delivering results on the leading edge of GaN-on-Si technology, we are very pleased that our achievements are recognized by the compound semiconductor industry through this prestigious prize. The AIX G5+ reactor has been specifically designed to produce GaN based devices on silicon without compromising performance or yield compared to processes on sapphire substrates.”

“GaN-on-Si is a very promising technology for future power electronics applications and high brightness LED manufacturing,” Dr. Frank Schulte adds.

The AIX G5+ is designed to handle five 200 mm wafers per production run providing high throughput and high yield growth of GaN devices on large area substrates.