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Deposition Systems for Compound Semiconductors

G10-SiC

150/200 mm high throughput epitaxy for SiC Power Electronics

Dual wafer size batch reactor

G10-SiC

  • 150 mm and 200 mm – dual wafer size capable – safeguard your investment into the future
  • Highest wafer output / m2 in the market
  • Lowest cost / wafer in the market
  • Excellent run-to-run process performance
  • Highly uniform, low defect SiC epitaxy processes for maximum chip yield

G10-SiC

Planetary Reactor® for 9 x 150 mm & 6 x 200 mm

Your benefits

  • Single wafer performance in batch configuration
  • Best in class productivity
  • Best in class epi cost

Our solutions

  • Fully automated wafer loading (C2C)
  • Individual wafer Gas Foil Rotation (GFR)
  • Automated Top side wafer Temperature Control (TTC) for optimized batch processing
  • Largest reactor capacity (9 x 150 mm & 6 x 200 mm)
  • High growth rate SiC processes
  • Hot wafer transfer and fast thermal reactor cycling
  • Best in class wafer throughput per m2 fab space efficacy
  • Low consumable cost per wafer
  • Highest efficiency in gas & power consumption per wafer

AIXTRON SiC application lab services

  • Operation of 4 systems for 150/200 mm SiC process development
  • Full material characterization capabilities supported by Fraunhofer Institute, Germany
  • Customer support through SiC process demonstration/developments and training

G10-SiC: 200 mm uniformity

G10-SiC: 150 mm uniformity

Ihr Ansprechpartner

Marketing

Dr. Frank Wischmeyer

Vice President Silicon Carbide

Service

AIXTRON SE (Headquarters)

AIXTRON 24/7 Technical Support Line

AIXTRON Europe

AIXTRON Ltd (UK)

AIXTRON K.K. (Japan)

AIXTRON Korea Co., Ltd.

AIXTRON Taiwan Co., Ltd. (Main Office)

AIXTRON Inc. (USA)

Produkte

Vincent Meric
Vice President Marketing

Karriere

Laura Preinich
Recruiter

Tom Lankes
Talent Acquisition Expert - Ausbildungsleitung

Nachhaltigkeit 

Christoph Pütz
Senior Manager ESG & Sustainability

Unternehmen & Investor Relations

Christian Ludwig
Vice President

Ralf Penner
Senior IR Manager

Forschung & Entwicklung

Prof. Dr. Michael Heuken
Vice President Advanced Technologies

Presse & Öffentlichkeitsarbeit

Ragah Dorenkamp
Director Corporate Communications