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04. August 2020 | Press Release
Order for a fully automated deposition equipment of AIXTRON / Fast rump-up through market-leading throughput / Best quality level through unmatched epitaxial stability and low defect ratios
Herzogenrath/Germany, August 4, 2020 – For its expansion into the market for GaN-on-Si High-Power Electronics (HPE) and Radio Frequency (RF) epi wafers, AZUR SPACE relies on the AIX G5+ C from AIXTRON SE (FSE: AIXA), a worldwide leading provider of deposition equipment to the semiconductor industry. AZUR SPACE, the global leader in the development and production of multi-junction solar cells for space and terrestrial concentrated photovoltaic applications, is a long-standing AIXTRON customer and has been using the AIX 2800G4-TM and AIX 2600G3 systems for its space solar application.
Epi wafers for the energy revolution
The now ordered fully automated AIX G5+ C system with its features in-situ cleaning, a cassette-to-cassette wafer handler and Auto-Feed Forward (AFF) individual on-wafer temperature control guarantees unmatched epitaxial stability and low defect ratios. Furthermore, AIXTRONs Planetary Reactor® enables high increases productivity and performance through highest throughput, lowest cost of ownership and highest yield performance. The state-of-the-art MOCVD platform is used for the production of 150- and 200-mm epi wafers.
With the establishment of a second business line leveraging its III-V manufacturing expertise, AZUR SPACE positions itself on the fast growing market for Gallium Nitride (GaN) epi wafer for Power Electronics and RF applications. The demand for these epi wafers with its capacity to operate at higher frequency and in smaller form factor is mainly driven by the need for energy efficient power systems, rapid charging solutions, renewable energies, server farms or the next generation of wireless networks (5G).
Chosen by the best in the industry
“Market entry will be a challenge. However, our more than 25 years of experience in III-V epitaxy technology with development and mass production is ideally complemented by AIXTRON's system, so we have a very good starting position. Importantly, AIXTRON's state-of-the-art Planetary Reactor® provides us with the excellent quality level of our epi wafers required to capture the future market for high-performance electronics,” says AZUR’s CEO Jürgen Heizmann.
Dr. Felix Grawert, President of AIXTRON SE adds: “The market for GaN epi wafers for power electronics and RF applications is very exciting. It is expected to grow significantly driven by numerous applications such as fast charging solutions or the next generation of wireless networks (5G). The high energy efficiency of GaN based power electronics contributes significantly to reducing the climate impact of new technologies”.
Our registered trademarks: AIXACT®, AIXTRON®, Atomic Level Solutions®, Close Coupled Showerhead®, CRIUS®, EXP®, EPISON®, Gas Foil Rotation®, Optacap™, OVPD®, Planetary Reactor®, PVPD®, STExS®, Trijet®
Alan Tai
Taiwan/Singapore
Christof Sommerhalter
USA
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Europe
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Japan
Nam Kyu Lee
South Korea
Wei (William) Song
China
AIXTRON SE (Headquarters)
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Laura Preinich
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Tom Lankes
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